2SK2879-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 ±20 ±80 ±30 20 761 150 +150 -55 to +150 *1 L=3.49mH, Vcc=50V Unit Drain(D) V A A V A mJ W °C °C Gate(G) Source(S) < *2 Tch=150°C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V Typ. Max. 500 2.5 Tch=25°C Tch=125°C ID=10A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 Ω L=3.49 mH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C 3.0 3.5 10 500 0.2 1.0 10 100 0.33 0.38 7.5 15.0 2200 3300 330 500 140 210 20 30 130 200 160 240 105 160 20 1.1 1.65 650 10.0 Units V V µA mA nA Ω S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.83 35.0 Units °C/W °C/W 1 2SK2879-01 FUJI POWER MOSFET Characteristics 160 Safe operating area Power Dissipation PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C 2 10 140 t=1µs 10µs DC 120 1 10 100µs 100 ID [A] PD [W] 1ms 80 0 10 10ms 60 100ms 40 10 t -1 D= 20 0 t T T 0 50 100 10 150 -2 10 0 10 1 10 2 3 10 o Tc [ C] VDS [V] Typical transfer characteristic Typical output characteristics ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C 50 10 VGS=20V 10V 8V 40 10 6V 2 1 ID [A] ID [A] 30 5.5V 10 0 20 5V 10 -1 10 4.5V 0 10 0 5 10 15 20 25 30 -2 35 0 1 2 3 4 10 6 7 8 9 10 VGS [V] VDS [V] 10 5 Typical forward transconductance Typical drain-source on-state resistance gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 3 2 VGS=4.5V 5V 5.5V 6V 1 10 RDS(on) [ Ω ] gfs [s] 2 0 1 10 10 -1 8V 10V 20V 0 -2 10 -2 10 -1 10 0 ID [A] 10 1 10 2 0 5 10 15 20 25 30 35 40 45 50 ID [A] 2 2SK2879-01 Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V 6.0 1.0 5.0 0.8 4.0 VGS(th) [V] RDS(on) [ Ω ] 1.2 FUJI POWER MOSFET max. 0.6 typ. 0.4 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS max. 3.0 typ. min. 2.0 0.2 1.0 0.0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=20A,Tch=25°C 50 500 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz 45 450 Vcc=400V 400 40 350 35 Ciss 1n 200 20 150 15 VDS [V] 250V VGS [V] 250 30 400V 25 C [F] Vcc=100V 250V 300 Coss Crss 100p 100V 100 10 50 5 0 0 50 100 150 200 250 0 300 10p 10 -2 10 -1 10 Qg [nC] 10 2 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=50V,IAV=20A 800 700 10 1 600 o Tch=25 C typ. 10 10 Eas [mJ] IF [A] 500 0 -1 400 300 200 100 10 -2 0 0.0 0.2 0.4 0.6 0.8 VSD [V] 1.0 1.2 1.4 0 50 100 150 o Starting Tch [ C] 3 2SK2879-01 10 1 10 0 FUJI POWER MOSFET Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] D=0.5 0.2 10 -1 10 -2 0.1 0.05 0.02 t 0.01 D= 0 10 t T T -3 -5 10 10 -4 10 -3 -2 10 10 -1 10 0 1 10 t [s] 4