2SK2767-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 ±3.5 ±14 ±35 3.5 258 80 +150 -55 to +150 *1 L=38.6mH, Vcc=90V Equivalent circuit schematic Unit Drain(D) V A A V A mJ W °C °C Gate(G) Source(S) < *2 Tch=150°C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=±35V VDS=0V ID=2.0A VGS=10V 900 3.5 Tch=25°C Tch=125°C ID=2.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V 1.0 RGS=10 Ω L=100 µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C Typ. 4.0 10 0.2 10 4.0 2.0 450 75 40 20 40 50 25 Max. 4.5 500 1.0 100 5.5 680 120 60 30 60 80 40 3.5 1.0 1000 5.0 1.5 Units V V µA mA nA Ω S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units °C/W °C/W 1 2SK2767-01 FUJI POWER MOSFET Characteristics 100 Power Dissipation PD=f(Tc) Safe operating area ID=f(VDS):D=0.01,Tc=25°C 90 80 10 t=0.01 µs 1µ s 10µs 1 70 DC 100µs ID [A] PD [W] 60 50 40 10 0 1ms 10ms 30 10 -1 100ms t 20 D= T 10 0 t T 0 50 100 10 150 -2 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical transfer characteristic ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C ID [A] 10 10 10 10 1 0 -1 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] Typical forward transconductance gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C 1 10 0 gfs [s] 10 10 -1 10 -1 10 0 10 1 ID [A] 2 2SK2767-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V 16 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 6.0 14 5.0 12 max. 4.0 8 VGS(th) [V] RDS(on) [ Ω ] 10 max. 6 typ. min. 3.0 2.0 typ. 4 1.0 2 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=3.5A,Tch=25°C 10n 40 800 Vcc=720V 0V 35 18 c= 0V c 5 V 4 0V 72 30 700 600 400 20 300 15 C [F] 25 450V VGS [V] Ciss 100p 200 180V 10 100 5 Coss Crss 0 0 0 10 20 30 40 50 60 70 10p 10 80 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,IAV=3.5A 300 10 250 1 o Tch=25 C typ. 10 200 Eas [mJ] IF [A] VDS [V] 1n 500 0 150 100 10 -1 50 10 -2 0.0 0.2 0.4 0.6 0.8 VSD [V] 1.0 1.2 1.4 0 0 50 100 150 o Starting Tch [C] 3 2SK2767-01 10 1 FUJI POWER MOSFET Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] 0 10 D=0.5 0.2 0.1 10 -1 0.05 0.02 t D= -2 0.01 0 10 -5 10 t T T -4 10 10 -3 -2 10 -1 10 10 0 1 10 t [s] 4