2SK3611-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Ratings Unit V 250 V 220 A Continuous drain current ±14 Equivalent A Pulsed drain current ±56 V Gate-source voltage ±30 A Non-repetitive Avalanche current 14 mJ Maximum Avalanche Energy 129.1 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.16 W Gate(G) 37 +150 Operating and storage Tch °C temperature range Tstg °C -55 to +150 kVrms Isolation voltage VISO 2 *1 L=1.11mH, Vcc=48V,Tch=25°C,See to Avalanche Enrgy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 250V *5 VGS=-30V *6 t=60sec f=60Hz circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V Typ. 250 3.0 Tch=25°C Tch=125°C ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V 5 RGS=10 Ω VCC =125V ID=10A VGS=10V L=1.11mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 14 1.10 0.155 1.05 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.378 58.0 Units °C/W °C/W 1 2SK3611-01MR FUJI POWER MOSFET Characteristics 50 Allowable Power Dissipation PD=f(Tc) Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 350 IAS=6A 300 40 250 IAS=9A EAS [mJ] PD [W] 30 20 200 150 IAS=14A 100 10 50 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [°C] Tc [°C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 30 100 20V 25 10V 8V 7.5V 7.0V 10 ID[A] ID [A] 20 6.5V 15 10 1 6.0V 5 VGS=5.5V 0.1 0 0 2 4 6 8 10 0 12 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 0.6 100 RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 5.5V 6.0V 6.5V 0.5 7.0V gfs [S] RDS(on) [ Ω ] 10 7.5V 8V 10V 0.4 20V 0.3 0.2 1 0.1 0.1 0.1 0.0 1 10 ID [A] 100 0 5 10 15 20 25 30 ID [A] 2 2SK3611-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 7.0 800 6.5 700 6.0 5.5 max. 5.0 VGS(th) [V] RDS(on) [ m Ω ] 600 500 400 max. 4.5 4.0 3.5 3.0 300 min. 2.5 2.0 typ. 200 1.5 1.0 100 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [°C] 50 75 100 125 150 Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25°C 14 10 0 Ciss 12 10 -1 C [nF] VGS [V] 10 8 Vcc= 125V Coss 6 10 4 -2 2 Crss 0 0 10 20 30 10 40 -3 10 -1 10 0 10 Qg [nC] 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80µs Pulse test,Tch=25°C 3 100 10 10 10 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω tf t [ns] IF [A] 2 td(off) td(on) 1 1 10 tr 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 VSD [V] 1.50 1.75 2.00 10 -1 10 10 0 10 1 2 10 ID [A] 3 2SK3611-01MR 2 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=48V Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 -7 10 10 -6 -5 10 -4 10 10 -3 -2 10 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4