HITACHI BB303M

BB303M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-697A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143 var.)
Outline
Notes: 1. Marking is “CW–”.
2. BB303M is individual type number of HITACHI BBFET.
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
7
V
Gate1 to source voltage
VG1S
– 0/ +7
V
Gate2 to source voltage
VG2S
– 0/ +7
V
Drain current
ID
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
BB303M
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
7
—
—
V
I D = 200µA
VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V(BR)G1SS
+7
—
—
V
I G1 = +10µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+7
—
—
V
I G2 = +10µA
VG1S = VDS = 0
Gate1 to source cutoff current
I G1SS
—
—
+100
nA
VG1S = +5V
VG2S = VDS = 0
Gate2 to source cutoff current
I G2SS
—
—
+100
nA
VG2S = +5V
VG1S = VDS = 0
Gate1 to source cutoff voltage
VG1S(off)
0.3
0.6
0.9
V
VDS = 5V, VG2S = 4V
I D = 100µA
Gate2 to source cutoff voltage
VG2S(off)
0.5
0.8
1.1
V
VDS = 5V, VG1S = 5V
I D = 100µA
Drain current
I D(op)
9
14
20
mA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 470kΩ
Forward transfer admittance
|yfs|
35
42
50
mS
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 470kΩ, f = 1kHz
Input capacitance
c iss
2.6
3.3
4.0
pF
VDS = 5V, VG1 = 5V
Output capacitance
c oss
1.7
2.1
2.5
pF
VG2S =4V, RG = 470kΩ
Reverse transfer capacitance
c rss
—
0.025
0.05
pF
f = 1MHz
Power gain
PG1
28
32
—
dB
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
Noise figure
NF1
—
1.0
1.6
dB
f = 200MHz
Power gain
PG2
12
16.5
—
dB
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
Noise figure
2
NF2
—
2.85
3.7
dB
f = 900MHz
BB303M
Main Characteristics
3
BB303M
4
BB303M
5
BB303M
6
BB303M
7
BB303M
8
BB303M
9
BB303M
10
BB303M
11
BB303M
Sparameter (V DS = VG1 = 5V, VG2S = 4V, RG = 470kΩ, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.947
–7.0
4.11
174.4
0.00400
89.0
0.985
–3.1
100
0.978
–11.9
4.13
167.1
0.00305
116.5
0.985
–6.8
150
0.973
–18.7
4.04
159.8
0.00266
75.5
0.982
–10.1
200
0.960
–23.8
4.01
152.7
0.00384
66.8
0.978
–13.5
250
0.956
–29.6
3.90
146.4
0.00453
70.1
0.970
–16.8
300
0.939
–35.5
3.85
139.9
0.00440
59.6
0.965
–20.0
350
0.930
–40.3
3.68
133.6
0.00550
67.2
0.957
–23.1
400
0.905
–45.7
3.63
128.3
0.00571
59.0
0.949
–26.2
450
0.889
–50.3
3.45
122.7
0.00583
54.2
0.940
–29.2
500
0.870
–55.6
3.35
116.6
0.00634
51.6
0.932
–32.1
550
0.855
–59.6
3.22
111.5
0.00596
56.2
0.924
–35.0
600
0.841
–63.9
3.10
106.3
0.00591
55.7
0.917
–37.7
650
0.826
–67.9
3.02
101.4
0.00544
54.9
0.908
–40.5
700
0.812
–71.8
2.89
96.1
0.00533
57.2
0.900
–43.1
750
0.799
–75.6
2.78
91.8
0.00495
64.6
0.893
–45.7
800
0.788
–78.9
2.70
87.5
0.00470
66.5
0.887
–48.1
850
0.778
–82.6
2.60
82.2
0.00460
75.1
0.880
–50.6
900
0.765
–85.8
2.48
78.1
0.00445
83.8
0.874
–52.9
950
0.763
–88.8
2.41
74.2
0.00486
97.0
0.869
–55.3
1000
0.748
–92.2
2.34
69.7
0.00502
102.6
0.864
–57.5
12
BB303M
Package Dimensions
Unit: mm
13
BB303M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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