2SC2411 SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z High ICMax.ICMax. = 0.5mA z Low VCE(sat).Optimal for low voltage operation. z Complements the 2SA1036 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 μA Emitter cut-off current IEBO VEB=4V,IC=0 1 μA DC current gain hFE VCE=3V,IC=100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking JinYu 390 IC=500mA,IB=50mA 0.4 V VCE=5V,IC=20mA,f=100MHz 250 MHz VCB=10V,IE=0,f=1MHz 6.0 pF hFE P Q R 82-180 120-270 180-390 CP CQ CR １ semiconductor 82 www.htsemi.com 2SC2411 ２ JinYu semiconductor www.htsemi.com