2SB1 21 8 A TRANSISTOR(PNP) FEATURES SOT–323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 V IC Collector Current -100 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA, IE=0 -45 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -7 V Collector cut-off current ICBO VCB=-20V, IE=0 -100 nA Collector cut-off current ICEO VCE=-10V, IB=0 -100 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE VCE=-10V, IC=-2mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 160 460 IC=-100mA, IB=-10mA -0.5 VCE=-10V,IE=1mA ,f=200MHz 80 MHz VCB=-10V, IE=0, f=1MHz 2.7 pF CLASSIFICATION OF hFE RANK Q R S RANGE 160–260 210–340 290–460 MARKING BQ1 BR1 BS1 １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５