KTC4372 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z High Voltage Switching Application z High Voltage z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 200 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=200V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=5V, IC=10mA VCE(sat) IC=10mA,IB=1mA 0.5 VBE VCE=5V, IC=30mA 1 V VCB=10V,IE=0, f=1MHz 5 pF Collector-emitter saturation voltage Base-emitter voltage Cob Collector output capacitance fT Transition frequency VCE=30V,IC= 10mA 70 240 120 V MHz CLASSIFICATION OF hFE RANK O Y RANGE 70–140 120–240 MARKING AO AY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５