2SC2881 SOT-89-3L TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=5V, IC=100mA Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance IC=500mA,IB=50mA 1 V 1 V VCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 １ JinYu 240 VCE=5V, IC=0.5A CLASSIFICATION OF hFE semiconductor 80 www.htsemi.com 120 MHz 30 pF