2SD596 TRANSISTOR (NPN) FEATURES z High DC Current gain. z Complimentary to 2SB624 SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1.BASE Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 30 V IC= 1mA, IB=0 25 V V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=30V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA IE=0 hFE(1)* VCE= 1V, IC= 100mA 110 hFE(2)* VCE=1V, IC= 700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=700mA, IB=70mA Base-emitter voltage VBE * VCE=6V, IC=10mA 0.6 Transition frequency fT VCE=6V, IC= 10mA 170 DC current gain VCB=6V,IE=0,f=10MHZ Cob Collector Output Capacitance 400 0.6 V 0.7 V MHz 12 pF * Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. CLASSIFICATION OF hFE(1) Marking Range DV1 DV2 DV3 DV4 DV5 110-180 135-220 170-270 200-320 250-400 １ JinYu semiconductor www.htsemi.com ２ JinYu semiconductor www.htsemi.com ３ JinYu semiconductor www.htsemi.com