FCX591 TRANSISTOR (PNP) SOT-89 FEATURES Power dissipation 1. BASE 2. COLLECTOR 1 MARKING:P1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO* IC= -10mA , -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V IB=0 Collector cut-off current ICBO VCB=-60 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4 V , -0.1 μA Collector- Emitter cut-off current ICES VCES=-60 V, IE=0 -0.1 μA DC current gain hFE* Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * Base-emitter voltage VBE* Transition frequency fT Collector output capacitance Cob VCE=-5V, VCE=-5V, VCE=-5V, VCE=-5V, IC=0 IC= -1mA IC= -500mA IC= -1A IC= -2A 100 100 80 15 300 IC=-500 mA, IB= -50mA -0.3 IC=-1A, IB= -100mA -0.6 IC=-1A, IB= -100mA -1.2 V -1 V VCE=-5V, IC= -1A VCE= -10V, IC=- 50mA f =100MHz VCB=-10V, f=1MHz 150 V MHz 10 pF *Pulse width=300s. Duty cycle 2% １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ FCX591 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５