2SD965A TRANSISTOR (NPN) FEATURES z Audio amplifier z Flash unit of camera z Switching circuit SOT-89 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2. COLLECTOR 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 7 V Collector cut-off current ICBO VCB= 10V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 μA hFE(1) VCE= 2 V, IC=1mA hFE’(2) VCE= 2V, IC = 500mA 230 hFE(3) VCE= 2V, IC =2A 150 VCE(sat) IC=3A, IB=0.1A DC current gain Collector-emitter saturation voltage fT Transition frequency Cob Out capacitance CLASSIFICATION OF Rank Range VCE=6V, IC=50mA JinYu 800 1 150 50 hFE(2) Q R 230-380 340-600 www.htsemi.com V MHz VCB=20 V , IE=0, f=1MHZ １ semiconductor 200 S 560-800 pF 2SD965A ２ JinYu semiconductor www.htsemi.com