HTSEMI 2SD965A

2SD965A
TRANSISTOR (NPN)
FEATURES
z
Audio amplifier
z
Flash unit of camera
z
Switching circuit
SOT-89
1. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
750
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
2. COLLECTOR
1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=0.1mA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA. IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
7
V
Collector cut-off current
ICBO
VCB= 10V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V, IC=0
0.1
μA
hFE(1)
VCE= 2 V, IC=1mA
hFE’(2)
VCE= 2V, IC = 500mA
230
hFE(3)
VCE= 2V, IC =2A
150
VCE(sat)
IC=3A, IB=0.1A
DC current gain
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Out capacitance
CLASSIFICATION OF
Rank
Range
VCE=6V, IC=50mA
JinYu
800
1
150
50
hFE(2)
Q
R
230-380
340-600
www.htsemi.com
V
MHz
VCB=20 V , IE=0, f=1MHZ
1 semiconductor
200
S
560-800
pF
2SD965A
2
JinYu
semiconductor
www.htsemi.com