KTA1298 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES Low frequency power amplifier application z z Power switching application 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Tstg Storage Temperature Value -35 -30 -5 -0.8 200 150 Units V V V A mW ℃ -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=- 1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V ICBO VCB=-30 V,IE=0 -0.1 μA IEBO VEB= -5V,IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-800mA 40 Collector cut-off Emitter cut-off DC current current current Collector-emitter saturation voltage Base- emitter voltage Transition 320 gain VCE(sat) V -0.8 V VCE=-1V, IC=-10mA fT VCE=-5V, IC=-10mA, 120 MHz VCB=-10V, IE=0,f=1MHz 13 pF Cob -0.5 -0.4 VBE frequency Collector output capacitance IC=-500mA, IB= -20mA CLASSIFICATION OF hFE(1) Rank Range MARKING O Y 100-200 160-320 IO IY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA1298 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５