A44 TRANSISTOR SOT-89-3L (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC=100µA,IE=0 500 V IC=1mA,IB=0 400 V IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=400V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1)* VCE=10V, IC=1mA 40 hFE(2)* VCE=10V, IC=10mA 50 hFE(3)* VCE=10V, IC=50mA 45 hFE(4)* VCE=10V, IC=100mA 40 VCE(sat)* VBE(sat)* 200 IC=1mA,IB=0.1mA 0.4 V IC=10mA,IB=1mA 0.5 V IC=50mA,IB=5mA 0.75 V IC=10mA,IB=1mA 0.75 V Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF Emitter input capacitance Cib VBE=0.5V, IC=0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５