MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm Marking : MMBTA13:K2D; MMBTA14:K3D 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 300 mW RθJA Thermal Resistance Junction to Ambient 417 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100μA, Collector-emitter breakdown voltage V(BR)CEO Collector-emitter breakdown voltage MIN MAX UNIT 30 V IC= 100uA, IB=0 30 V V(BR)EBO IE= 100μA, IC=0 10 V Collector cut-off current ICBO* VCB=30 V , IE=0 0.1 μA Emitter cut-off current IEBO* VEB= 10V , 0.1 μA hFE(1) * DC current gain hFE(2) * IE=0 IC=0 VCE=5V, IC= 10mA VCE=5V, IC= 100mA MMBTA13 5000 MMBTA14 10000 MMBTA13 10000 MMBTA14 20000 Collector-emitter saturation voltage VCE (sat)* IC=100mA, IB=0.1mA 1.5 V Base-emitter saturation voltage VBE (sat) * IC=100mA, IB=0.1mA 2 V Base-emitter voltage VBE * VCE=5V,IC= 100mA 2.0 V Transition frequency fT Collector output capacitance Cob VCE=5V, IC= 10mA f=100MHz VCB=10V,IE=0,f=1MHz 125 MHz 12 * Pulse Test : pulse width≤300μs,duty cycle≤2%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF MMBTA13,14 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA13,14 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５