BC869 TRANSISTOR (PNP) SOT-89-3L FEATURES NPN Complement to BC868 Low Voltage High Current 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -32 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-25V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1) VCE=-10V, IC=-5mA 50 hFE(2) VCE=-1V, IC=-0.5A 100 hFE(3) VCE=-1V, IC=-1A 60 DC current gain Collector-emitter saturation voltage VCE(sat) Base -emitter voltage VBE Transition frequency fT 375 IC=-1A,IB=-0.1A -0.5 V VCE=-1V, IC=-1A -1 V VCE=-10V, IC=-5mA VCE=-5V,IC=-10mA, f=100MHz -0.62 V MHz 40 CLASSIFICATION OF hFE(2) RANK BC869 BC869-16 BC869-25 RANGE 100–375 100–250 160–375 MARKING CEC CGC CHC １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５