A42 SOT-89-3L TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V ICBO VCB=200V,IE=0 0.25 µA VCE=200V,IB=0 0.25 µA VCE=300V,IB=0 5 µA 0.1 µA Collector cut-off current Emitter cut-off current DC current gain ICEO IEBO VEB=5V,IC=0 hFE(1) VCE=10V, IC=1mA 60 hFE(2) VCE=10V, IC=10mA 80 hFE(3) VCE=10V, IC=30mA 75 250 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency VCE=20V,IC=10mA, f=30MHz fT 50 MHz CLASSIFICATION OF hFE（2） RANK A B1 B2 C RANGE 80–100 100–150 150–200 200–250 MARKING A42 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５