HTSEMI MMST5551

MMST5551
TRANSISTOR(NPN)
SOT–323
FEATURES
 Complementary to MMST5401
 Small Surface Mount Package
 Ideal for Medium Power Amplification and Switching
MARKING:K4N
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
600
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=120V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB=4V, IC=0
50
nA
DC current gain
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
Collector output capacitance
fT
Cob
VCE=5V, IC=1mA
80
VCE=5V, IC=10mA
80
VCE=5V, IC=50mA
30
300
IC=50mA, IB=5mA
0.2
V
IC=10mA, IB=1mA
0.15
V
IC=50mA, IB=5mA
1
V
IC=10mA, IB=1mA
1
V
300
MHz
6
pF
VCE=10V,IC=10mA , f=100MHz
VCB=10V, IE=0, f=1MHz
100
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05