isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEV Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 1.52 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N3055A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 3.0 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 15A; IB= 7A 5.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ 5.0 30 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 4A; VCE= 2V 10 70 hFE-2 DC Current Gain IC= 4A; VCE= 4V 20 70 hFE-3 DC Current Gain IC= 10A; VCE= 4V 5 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 60V; t= 0.5s,Nonrepetitive COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz Current Gain-Bandwidth Product IC= 1A; VCE= 4V; f= 1.0MHz fT CONDITIONS MIN MAX 60 UNIT V 1.95 A 600 0.8 pF MHz Switching Times td Delay Time tr Rise Time tstg tf Storage Time IC= 4A; VCC= 30V; IB1= -IB2= 0.4A, tp= 25μs; Duty Cycle≤ 2% Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 4.0 μs 3.0 μs 6.0 μs