ISC MJ15011

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ15011
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain: hFE= 20(Min.)@IC = 2A
·Collector-Emitter Saturation Voltage: VCE(sat)= 2.5V(Max)@ IC = 4A
·Complement to Type MJ15012
APPLICATIONS
·Designed for high power audio, disk head positioners , and
other linear applications. These devices can also be used
in power switching circuits such as relay or solenoid drivers,
DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO(SUS)
Collector-Emitter Voltage
250
V
VCEX
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
5
A
IE
Emitter Current-Continuous
-12
A
IEM
Emitter Current-Peak
-20
A
PD
Total Power [email protected]=25℃
200
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ15011
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A ;IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 2V
2.0
V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
1.0
mA
ICEX
Collector Cutoff Current
VCE= 250V;VBE(off)= 1.5V
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.5
mA
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
20
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
5
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
isc Website:www.iscsemi.cn
CONDITIONS
B
MIN
MAX
250
B
B
UNIT
V
100
750
pF