Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package APPLICATIONS ・Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 55 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A IB Base current 2 A PD Power dissipation 2N3054 25 TC=25℃ W 2N3054A 75 Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER 2N3054 7.0 2N3054A 2.33 ℃/W Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=3A; IB=1A 6.0 V VBE Base -emitter on voltage IC=0.5A ; VCE=4V 1.7 V ICEV Collector cut-off current VCE=90V;VBE(off)=1.5V TC=150℃ 1.0 6.0 mA ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=10V 40 hFE-2 DC current gain IC=1A ; VCE=2V 8 Transition frequency IC=0.2A ; VCE=10V;f=1MHz fT CONDITIONS 2 MIN TYP. MAX 55 3.0 UNIT V 80 Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors 4