Inchange Semiconductor Product Specification 2N6355 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 0.5 A PD Total Power Dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.09 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6355 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE sat Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=40V;IB=0 1.0 mA ICBO Collector cut-off current VCB=50V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=5V 500 hFE-2 DC current gain IC=20A ; VCE=5V 100 2 MIN TYP. MAX 40 UNIT V 5000 Inchange Semiconductor Product Specification 2N6355 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3