Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector 导体 半 电 固 Fig.1 simplified outline (TO-3) and symbol SYMBOL PARAMETER CONDITIONS M E S E 2N6383 VCBO VCEO ANG Collector-base voltage INCH Collector-emitter voltage 2N6384 Open emitter VALUE 60 80 2N6383 40 2N6384 Open base Emitter-base voltage UNIT 40 2N6385 2N6385 VEBO R O T UC D N O IC Absolute maximum ratings(Ta=℃) 60 V V 80 Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 0.25 A PD Total Power Dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.75 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6383 VCEO(SUS) Collector-emitter sustaining voltage 2N6384 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 V 60 2N6385 80 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=10mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V VBE-1 Base-emitter on voltage IC=5A ; VCE=3V 2.8 V VBE-2 Base-emitter on voltage IC=10A ; VCE=3V 4.5 V ICEO 体 半导 固电 Collector cut-off current 2N6383 VCE=40V; IB=0 2N6384 VCE=60V; IB=0 N A H INC Collector cut-off current D N O IC M E S GE 2N6385 ICEX R O T UC VCE=80V; IB=0 1.0 2N6383 VCE=40V; VBE=-1.5V TC=125℃ 0.3 3.0 2N6384 VCE=60V; VBE=-1.5V TC=125℃ 0.3 3.0 2N6385 VCE=80V; VBE=-1.5V TC=125℃ 0.3 3.0 10 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=5A ; VCE=3V 1000 hFE-2 DC current gain IC=10A ; VCE=3V 100 COB Output capacitance IE=0; VCB=10V;f=1MHz 2 mA mA mA 20000 200 pF Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3