ISC 2N6383

Inchange Semiconductor
Product Specification
2N6383 2N6384 2N6385
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N6648/6649/6650
・DARLINGTON
・High DC current gain
APPLICATIONS
・Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
导体
半
电
固
Fig.1 simplified outline (TO-3) and symbol
SYMBOL
PARAMETER
CONDITIONS
M
E
S
E
2N6383
VCBO
VCEO
ANG
Collector-base voltage
INCH
Collector-emitter voltage
2N6384
Open emitter
VALUE
60
80
2N6383
40
2N6384
Open base
Emitter-base voltage
UNIT
40
2N6385
2N6385
VEBO
R
O
T
UC
D
N
O
IC
Absolute maximum ratings(Ta=℃)
60
V
V
80
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
IB
Base current
0.25
A
PD
Total Power Dissipation
100
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.75
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6383 2N6384 2N6385
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6383
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6384
MIN
TYP.
MAX
UNIT
40
IC=0.2A ;IB=0
V
60
2N6385
80
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=10mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3.0
V
VBE-1
Base-emitter on voltage
IC=5A ; VCE=3V
2.8
V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=3V
4.5
V
ICEO
体
半导
固电
Collector cut-off current
2N6383
VCE=40V; IB=0
2N6384
VCE=60V; IB=0
N
A
H
INC
Collector cut-off current
D
N
O
IC
M
E
S
GE
2N6385
ICEX
R
O
T
UC
VCE=80V; IB=0
1.0
2N6383
VCE=40V; VBE=-1.5V
TC=125℃
0.3
3.0
2N6384
VCE=60V; VBE=-1.5V
TC=125℃
0.3
3.0
2N6385
VCE=80V; VBE=-1.5V
TC=125℃
0.3
3.0
10
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=3V
1000
hFE-2
DC current gain
IC=10A ; VCE=3V
100
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
2
mA
mA
mA
20000
200
pF
Inchange Semiconductor
Product Specification
2N6383 2N6384 2N6385
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3