ISC 2N6354

Inchange Semiconductor
Product Specification
2N6354
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Excellent safe operating area
・Fast switching speed
・Low collector saturation voltage
・High power dissipation
APPLICATIONS
・For switching applications in military
and industrial equipment
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6.5
V
IC
Collector current
10
A
ICM
Collector current-peak
12
A
IB
Base current
5
A
PD
Total Power Dissipation
140
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6354
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdwon voltage
IC=0.2A ;IB=0
120
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=5m A ;IC=0
6.5
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VBE sat-1
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.3
V
VBE sat-2
Base-emitter saturation voltage
IC=10A; IB=1A
2.0
V
ICEO
Collector cut-off current
VCE=100V;VBE=0
TC=125℃
10
mA
ICEV
Collector cut-off current
VCE=140V; IB=0
10
20
mA
ICBO
Collector cut-off current
VCB=150V; IE=0
5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
mA
hFE-1
DC current gain
IC=5A ; VCE=2V
20
150
hFE-2
DC current gain
IC=10A ; VCE=2V
10
100
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2N6354
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3