isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV41 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 3A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VBE=-1.5V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 300 V 200 V 7 V s c s i . w w w IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 3 A IBM Base Current- Peak 5 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.6A 0.9 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 1A 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A ;IB= 0.6A 1.6 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 1A 1.8 V VCE= 300V;RBE= 10Ω VCE= 300V;RBE= 10Ω;TC=100℃ 0.5 2.5 mA VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=100℃ 0.5 2.5 mA VEB= 5V; IC= 0 1.0 mA 0.5 μs 1.2 μs 0.3 μs Collector Cutoff Current ICEV Collector Cutoff Current IEBO Emitter Cutoff Current w UNIT 7 V n c . i m e s c s .i MAX V B B TYP. 200 B ww ICER MIN Switching Times, Resistive Load tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 8A; IB1= 1A; VCC= 160V; RB2= 2.5Ω; VBB= -5V, tp= 30μs