ISC 2SB1185

Inchange Semiconductor
Product Specification
2SB1185
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation votlage
・Complement to type 2SD1762
APPLICATIONS
・For use in low frequency power
amplifer applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector -emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
-4.5
A
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1185
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-500mA ; VCE=-3V
Transition frequency
IC=-0.5A; VCE=-5V
70
MHz
Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
50
pF
fT
COB
‹
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SB1185
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3