Inchange Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2275 VCBO Collector-base voltage 120 Open base 2SC2275A VEBO Emitter-base voltage V 150 2SC2275 Collector-emitter voltage UNIT 120 Open emitter 2SC2275A VCEO VALUE V 150 Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A IB Base current 0.3 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2275 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 120 IC=25mA ,IB=0 2SC2275A MIN V 150 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE-1 DC current gain IC=5mA ; VCE=5V 35 hFE-2 DC current gain IC=0.3A ; VCE=5V 60 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 19 pF fT Transition frequency IC=0.2A ; VCE=5V 200 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 2 150 320 Inchange Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3