isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak 3 A Collector Power Dissipation @ Ta=25℃ 1.5 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1646 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1646 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 1A; VCE= 2V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. B 2 1000 MAX UNIT 10000 25 pF