Inchange Semiconductor Product Specification KSD2058 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type KSB1366 APPLICATIONS ・With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V 3 A 0.5 A IC Collector current IB Base current PC Collector dissipation Ta=25℃ 1.5 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification KSD2058 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V; IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.5A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V 3.0 MHz Collector output capacitance f=1MHz;VCB=10V 35 pF 0.65 μs 1.3 μs 0.65 μs fT COB CONDITIONS MIN TYP. MAX 60 UNIT V 1.5 3.0 60 V V 300 Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15Ω hFE Classifications O Y G 60-120 100-200 150-300 2 Inchange Semiconductor Product Specification KSD2058 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3