isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 110V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Complement to Type 2SB1687 B APPLICATIONS ·Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD2642 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2642 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA 3.0 V ICBO Collector Cutoff Current VCB= 110V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 55 pF Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 60 MHz 0.8 μs 6.2 μs 1.1 μs fT CONDITIONS MIN TYP. MAX 110 UNIT V B B 5000 Switching Times ton Turn-on Time tstg Storage Time Fall Time tf VCC= 30V, RL= 6Ω, IC= 5A; IB1= -IB2= 5mA, hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 isc Website：www.iscsemi.cn 2