Inchange Semiconductor Product Specification 2SA1146 Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·High power dissipations APPLICATIONS ·For audio and general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -2 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1146 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -140 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 Transition frequency IC=-0.5A ; VCE=-10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 160 70 MHz Inchange Semiconductor Product Specification 2SA1146 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3