Inchange Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High VCEO ・Low COB APPLICATIONS ・For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=30mA ;IB=3m A 1.5 V Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V hFE DC current gain IC=5mA ; VCE=50V 50 COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IE=-20mA ; VCB=30V VBE 2 250 2.4 70 pF MHz Inchange Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors 4