ISC 2SD1888

Inchange Semiconductor
Product Specification
2SD1888
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・DARLINGTON
・Complement to type 2SB1339
・High DC current gain
APPLICATIONS
・Low frequency power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector -emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
TC=25℃
40
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1888
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=50μA; IE=0
120
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA;IB=0
120
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=5V;f=10MHz
40
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
2
2000
20000
Inchange Semiconductor
Product Specification
2SD1888
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3