Inchange Semiconductor Product Specification 2SC3256 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Fast switching speed ·Low saturation voltage APPLICATIONS ·60V/15A High-Speed Switching Applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICP Collector current-peak 20 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3256 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=7.5A; IB=0.375A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=6A; IB1=0.3A;IB2=-0.3A VCC=20V hFE Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SC3256 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3