ISC 2SC3571

Inchange Semiconductor
Product Specification
2SC3571
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High switching speed
APPLICATIONS
·Switching regulator
·DC-DC converter
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
7
A
ICM
Collector current-Peak
15
A
IB
Base current
3.5
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3571
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=3.0A , IB=0.6A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
ICEX
Collector cut-off current
VCE=400V; VBE=-1.5V
Ta=125℃
10
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
80
hFE -2
DC current gain
IC=1A ; VCE=5V
20
80
hFE -3
DC current gain
IC=3A ; VCE=5V
10
400
UNIT
V
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A;IB1=-IB2=0.6A
VCC≈150V; RL=50Ω
hFE-2 classifications
M
L
K
20-40
30-60
40-80
2
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3571
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3