Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current 3.5 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A , IB=0.6A,L=1mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA ICEX Collector cut-off current VCE=400V; VBE=-1.5V Ta=125℃ 10 1.0 μA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 80 hFE -2 DC current gain IC=1A ; VCE=5V 20 80 hFE -3 DC current gain IC=3A ; VCE=5V 10 400 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=3.0A;IB1=-IB2=0.6A VCC≈150V; RL=50Ω hFE-2 classifications M L K 20-40 30-60 40-80 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3