ISC 2SC2333

Inchange Semiconductor
Product Specification
2SC2333
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High speed switching
・Low collector saturation voltage
APPLICATIONS
・Switching regulator
・DC-DC converter
・Ultrasonic appliance
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
2
A
ICM
Collector current-peak
4
A
IB
Base current
1
A
PT
Total power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2333
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.5A;IB=0.1A;L=1mA
400
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.2
V
ICER
Collector cut-off current
VCE=400V;RBE=51Ω;
Ta=125℃
1.0
mA
ICEX1
Collector cut-off current
VCE=400V;VBE(OFF)=-5.0V
10
μA
ICEX2
Collector cut-off current
VCE=400V;VBE(OFF)=-5.0V
Ta=125℃
1.0
mA
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
ton
Turn on time
tstg
Storage time
tf
‹
IC=0.5A;IB1=-IB2=0.1A
RL=300Ω;VCC=150V
Fall time
hFE-1 classifications
M
L
K
20-40
30-60
40-80
2
TYP.
MAX
UNIT
V
80
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC2333
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC2333
Silicon NPN Power Transistors
4