Inchange Semiconductor Product Specification 2SC2333 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulator ・DC-DC converter ・Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2 A ICM Collector current-peak 4 A IB Base current 1 A PT Total power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2333 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A;IB=0.1A;L=1mA 400 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.2 V ICER Collector cut-off current VCE=400V;RBE=51Ω; Ta=125℃ 1.0 mA ICEX1 Collector cut-off current VCE=400V;VBE(OFF)=-5.0V 10 μA ICEX2 Collector cut-off current VCE=400V;VBE(OFF)=-5.0V Ta=125℃ 1.0 mA ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 ton Turn on time tstg Storage time tf IC=0.5A;IB1=-IB2=0.1A RL=300Ω;VCC=150V Fall time hFE-1 classifications M L K 20-40 30-60 40-80 2 TYP. MAX UNIT V 80 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2333 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2333 Silicon NPN Power Transistors 4