Inchange Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3568 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -10 A ICM Collector current (pulse) -20 A IB Base current (DC) -5 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) TYP. MAX UNIT Collector-emitter sustaining voltage IC=-5A;IB=-0.5A;L=1mH -100 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA ICER Collector cut-off current VCE=-100V; RBE=51Ω; Ta=125℃ -1 mA ICEX Collector cut-off current VCE=-100V;VBE(off)=1.5V Ta=125℃ -0.01 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 200 hFE-2 DC current gain IC=-3A ; VCE=-5V 40 200 hFE-3 DC current gain IC=-5A ; VCE=-5V 20 V Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A ;IB1=-IB2=-0. 5A VCC≈50V;RL=10Ω hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors 4