ISC 2SA1396

Inchange Semiconductor
Product Specification
2SA1396
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SC3568
·Low collector saturation voltage
·High switching speed
APPLICATIONS
·Switching regulator
·DC-DC converter
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-10
A
ICM
Collector current (pulse)
-20
A
IB
Base current (DC)
-5
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1396
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=-5A;IB=-0.5A;L=1mH
-100
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
ICER
Collector cut-off current
VCE=-100V; RBE=51Ω;
Ta=125℃
-1
mA
ICEX
Collector cut-off current
VCE=-100V;VBE(off)=1.5V
Ta=125℃
-0.01
-1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
200
hFE-2
DC current gain
IC=-3A ; VCE=-5V
40
200
hFE-3
DC current gain
IC=-5A ; VCE=-5V
20
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
‹
IC=-5A ;IB1=-IB2=-0. 5A
VCC≈50V;RL=10Ω
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SA1396
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SA1396
Silicon PNP Power Transistors
4