Inchange Semiconductor Product Specification 2SC3157 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SA1261 APPLICATIONS ・For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER E SEM R O T UC D N O IC VALUE UNIT Open emitter 150 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 7 V G N A H Collector-base voltage INC CONDITIONS IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 3.5 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3157 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=5A ;IB1=0.5A;L=1mH 100 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.01 mA ICEX Collector cut-off current VCE=100V; VBE=1.5V Ta=125℃ 0.01 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.01 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 体 导 半 固电 DC current gain ton ts tf CHA Turn-on time IN Storage time IC=5A;IB1=-IB2=0.5A , RL=10Ω;VCC≈50V Fall time hFE-2 classifications M L K 40-80 60-120 100-200 2 MAX UNIT V R O T UC 200 D N O IC IC=5A ; VCE=5V EM S E NG Switching times TYP. 20 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3157 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3