Inchange Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IB Base current (DC) 1 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.15A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.15A 0.9 1.2 V ICBO Collector cut-off current VCB=100V; IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=3A ; VCE=1V 40 Trainsition frequency IC=1A ; VCE=4V 120 MHz Collector output capacitance IE=0 ; VCE=10V;f=1MHz 80 pF 0.2 μs 1.0 μs 0.1 μs fT Cob CONDITIONS MIN TYP. MAX 80 UNIT V 240 Switching times ton Turn-on time tstg Storage time Fall time tf IB1=-IB2=0.15A VCC≈30V;RL=10Ω hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors 4