Inchange Semiconductor Product Specification 2SC3947 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 2 A PC Collector dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3947 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 850 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A ;IB=0.5A 1.5 V ICBO Collector cut-off current VCE=800V; IE=0 TC=100℃ 0.1 1.0 mA IEBO Emitter cut-off current VEB=6V ;IC=0 0.1 mA hFE DC current gain IC=2.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=10V 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF 10 MAX UNIT 30 Switching times tr tstg tf Rise time Storage time IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A Fall time 2 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3947 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3