ISC 2SC3947

Inchange Semiconductor
Product Specification
2SC3947
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage ,high speed
APPLICATIONS
・For TV horizontal output and power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
8
A
IB
Base current
2
A
PC
Collector dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3947
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
500
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
850
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A ;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A ;IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCE=800V; IE=0
TC=100℃
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=6V ;IC=0
0.1
mA
hFE
DC current gain
IC=2.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
20
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
70
pF
10
MAX
UNIT
30
Switching times
tr
tstg
tf
Rise time
Storage time
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
Fall time
2
0.5
μs
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC3947
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3