isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 1 A IBM Base Current-Peak 2 A PT Total Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4234 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 1.5A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 1mA ; VCE= 5V 7 Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 10V fT 800 UNIT V 8 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= 1.5A , IB1= 0.3A; IB2= -0.6A RL= 170Ω; VBB2= 4V Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 3.5 μs 0.3 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC4234 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn 2SC4234 4