isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) Base Current 0.15 A PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4370 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 μA hFE DC Current Gain IC= 100mA ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 25 pF Current-Gain—Bandwidth Product IC= 100m A ; VCE= 10V 100 MHz fT CONDITIONS hFE Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2 MIN TYP. MAX 160 UNIT V 70 240