isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS ·Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1567 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1567 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3.0 mA hFE DC Current Gain IC= -1A; VCE= -2V COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. B 2 1000 MAX UNIT 10000 35 pF