Inchange Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed ・Built-in damper diode APPLICATIONS ・Ultrahigh-definition color display ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 16 A PC Collector power dissipation TC=25℃ 60 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A;IB=1.7 A 5 V Base-emitter saturation voltage IC=5A;IB=1.7 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 800 IEBO Emitter cut-off current VEB=4V; IC=0 40 ICBO Collector cut-off current ICES VCEO(SUS) CONDITIONS TYP. V 130 mA VCB=800V; IE=0 10 μA Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 3 VF tstg tf 8 TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Diode forward voltage IEC=7A Switching times MIN Storage time IC=4A;RL=33.3Ω IB1=0.8A;- IB2=1.6A VCC=200V Fall time hFE-2 classifications 1 2 3 3-5 4-6 5-8 2 0.1 2.0 V 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4