isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1154 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.2 V VCE= 350V; VBE= 0 0.1 ICES MIN B B MAX VCE= 350V; VBE= 0;TC= 100℃ 1 5 Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V Fall Time IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω hFE Classifications R Q P 11-15 11-22 18-36 isc Website：www.iscsemi.cn UNIT mA Collector Cutoff Current IEBO tf CONDITIONS 11 mA 36 0.75 μs