Inchange Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 2.5 A PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 110 V V(BR)CBO Collector-base breakdown voltage IC=100μA; IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.7 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.3 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE DC current gain IC=150mA ; VCE=5V 2 MIN 100 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3