ISC 2SB1402

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)
·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A)
APPLICATIONS
·Designed for low frequency power amplifier applications.
n
c
.
i
m
e
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
s
c
s
.i
PARAMETER
w
w
w
VALUE
UNIT
-120
V
-120
V
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
Collector Power Dissipation
@Ta=25℃
2
PC
W
Collector Power Dissipation
@TC=25℃
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
2SB1402
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
2SB1402
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA; RBE= ∞
-120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
-120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -50mA; IC= 0
-7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -1.5A; IB= -3mA
-1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -3A; IB= -30mA
-3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -1.5A; IB= -3mA
-2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -3A; IB= -30mA
-3.5
V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-10
μA
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
-10
μA
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
isc Website:www.iscsemi.cn
TYP.
B
B
n
c
.
i
m
e
B
s
c
s
i
.
w
w
w
MIN
B
IC= -1.5A; VCE= -3V
IF= 3A
2
1000
MAX
UNIT
20000
3.0
V