isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD557 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·High Collector Power Dissipation APPLICATIONS ·Designed for high power audio amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 140 V 140 V 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD557 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A 2.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 2V 1.5 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 2.0 mA IEBO Emitter Cutoff Current 5.0 mA hFE DC Current Gain isc Website：www.iscsemi.cn VEB= 7V; IC= 0 IC= 5A; VCE= 4V TYP. MAX 140 n c . i m e s c s i . w w w MIN 30 UNIT V