ISC 2SD1563A

Inchange Semiconductor
Product Specification
2SD1563A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SB1086A
・Wide area of safe operation
・High breakdown voltage :BVCEO=160V(min)
APPLICATIONS
・For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
ICM
Collector current-peak
3.0
A
PC
Collector power dissipation
TC=25℃
10
W
Ta=25℃
1.2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1563A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
V(BR)EBO
Emitter-base breakdown voltage
V(BR)CBO
MIN
TYP.
MAX
UNIT
160
V
IE=50μA ;IC=0
5
V
Collector-base breakdown voltage
IC=50μA ;IE=0
160
V
VCEsat
Collector-emitter saturation voltage
IC=1.0A ;IB=0.1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=1.0A ;IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
80
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
20
pF
‹
hFE Classifications
N
P
Q
56-120
82-180
120-270
2
56
270
Inchange Semiconductor
Product Specification
2SD1563A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3