Inchange Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High speed switching ・Good linearity of hFE APPLICATIONS ・Power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 100 VCEO Collector-emitter voltage Open base 100 VEBO Emitter-base voltage Open collector IC V 7 V Collector current (DC) 5 A ICM Collector current-Peak 8 A IB Base current (DC) 0.5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V;IE=0 100 μA ICEO Collector cut-off current VCE=100V; IB=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=3V 100 1500 UNIT V 10000 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC=50V hFE Classifications Q P 1500-6000 5000-10000 2 3.0 μs 5.0 μs 3.0 μs Inchange Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3