Inchange Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 16 A 60 W PC Collector power dissipation 3 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A;IB=1.25 A 5 V Base-emitter saturation voltage IC=5A;IB=1.25 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO Emitter cut-off current VEB=4V ;IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1 mA VCEO(SUS) hFE-1 hFE-2 CONDITIONS MIN TYP. 800 V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=1 A ; VCE=5V 20 30 DC current gain IC=5A ; VCE=5V 4 7 Switching times tstg tf Storage time Fall time IC=4A;RL=50Ω IB1=0.8A; IB2=-1.6A VCC=200V 2 0.1 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4